Computational nanoeletronics. Process simulation for silicon nanoeletronic devices. Eletron transport in nanostructured systems-Ab initio study. Single-electron functional device circuits. Modeling of single-eletron trasistors for efficient circuit simula

Please use this identifier to cite or link to this item: http://hdl.handle.net/11744.6/6889

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DC Field	Value	Language
dc.contributor.author	Editor: M. Rieth/W. Schommers
dc.date.accessioned	2017-05-16T21:08:11Z	-
dc.date.available	2017-05-16T21:08:11Z	-
dc.identifier.govdoc	Mỹ
dc.identifier.other	CNNT-553
dc.identifier.uri	http://hdl.handle.net/11744.6/6889	-
dc.description	Los Angeles, California, USA: American Scientific Publishers, 2006. - Tiếng Anh.
dc.description	Los Angeles, California, USA: American Scientific Publishers, 2006. - Tiếng Anh.
dc.description	165
dc.description	1
dc.description.abstract	HANDBOOK OF THEORETICAL AND COMPUTATIONAL NANOTECHNOLOGY: 10 VOLUMES. VOLUME 10. NANODEVICE MODELING AND NANOELETRONICS= Sổ tay công nghệ nanô/nono lý thuyết và điện toán: 10 tập. Tập 10. Mô hình thiết bị nanô và nanô điện tử (CÔNG NGHỆ NANO. CÔNG NGHỆ NA
dc.publisher	5/13/2007
dc.subject	5
dc.subject	Tra cứu
dc.title	Computational nanoeletronics. Process simulation for silicon nanoeletronic devices. Eletron transport in nanostructured systems-Ab initio study. Single-electron functional device circuits. Modeling of single-eletron trasistors for efficient circuit simula
Appears in Collections:	Tong Hop

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